The role of Si orientation and temperature on the carrier mobility in metal oxide semiconductor field-effect transistors with ultrathin HfO 2 gate dielectrics
- B. Mereu
- C. Rossel
- et al.
- 2006
- Journal of Applied Physics
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76 results for E. Gusev
Room temperature interactions of water vapor with HfO 2 films on Si
- C. Driemeier
- E. Gusev
- et al.
- 2006
- Applied Physics Letters
Hybrid-orientation technology (HOT): Opportunities and challenges
- Min Yang
- Victor W.C. Chan
- et al.
- 2006
- IEEE Transactions on Electron Devices
Interaction of HfO2/SiO2/Si structures with deuterium gas
- C. Driemeier
- L. Miotti
- et al.
- 2006
- Applied Physics Letters
Germanium channel MOSFETs: Opportunities and challenges
- Huiling Shang
- Martin M. Frank
- et al.
- 2006
- IBM J. Res. Dev
Bias-temperature instabilities and radiation effects in MOS devices
- X.J. Zhou
- D.M. Fleetwood
- et al.
- 2005
- IEEE TNS
Electrical properties of ultrathin Al2O3 films grown by metalorganic chemical vapor deposition for advanced complementary metal-oxide semiconductor gate dielectric applications
- Spyridon Skordas
- Filippos Papadatos
- et al.
- 2005
- Journal of Materials Research
In situ investigation of growth and thermal stability of ultrathin Si layers on the HfO 2/Si (100) high- κ dielectric system
- Yu.Yu. Lebedinskii
- A. Zenkevich
- et al.
- 2005
- Applied Physics Letters
Optical second harmonic generation studies of ultrathin high-k dielectric stacks
- V. Fomenko
- E. Gusev
- et al.
- 2005
- Journal of Applied Physics
Structural, electronic, and dielectric properties of ultrathin zirconia films on silicon
- S. Sayan
- N.V. Nguyen
- et al.
- 2005
- Applied Physics Letters