Arsenic Source and Drain Implant Induced Degradation of Short-Channel Effects in NMOSFETs
- Alexandre Acovic
- Devendra K. Sadana
- et al.
- 1993
- IEEE Electron Device Letters
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22 results for A. Acovic
Reduced hot-carrier reliability degradation of x-ray irradiated MOSFETs in a 0.25 μm CMOS technology with ultra-thin gate oxide
- A. Acovic
- C.C.-H. Hsu
- et al.
- 1993
- Solid State Electronics
Optimized Silicon-Rich Oxide (SRO) Deposition Process for 5-V-Only Flash EEPROM Applications
- Leonello Dori
- Alexandre Acovic
- et al.
- 1993
- IEEE Electron Device Letters
Experimental 0.1-um p-Channel MOSFET with p+-Polysilicon Gate on 35-A Gate Oxide
- Yuan Taur
- S. Cohen
- et al.
- 1993
- IEEE Electron Device Letters
Enhanced short-channel effects in NMOSFETs due to boron redistribution induced by arsenic source and drain implant
- D.K. Sadana
- A. Acovic
- et al.
- 1992
- IEDM 1992
High transconductance 0.1 μ m pMOSFET
- Y. Taur
- S. Cohen
- et al.
- 1992
- IEDM 1992
Understanding of enhanced sensitivity to Hot Carrier degradation in drain engineered n-FETs
- C.C.-H. Hsu
- B.S. Wu
- et al.
- 1992
- SSDM 1992
Hot-carrier reliability of fully depleted accumulation mode SOI MOSFETS
- A. Acovic
- L.K. Wang
- et al.
- 1992
- IEEE International SOI Conference 1992
Effect of hydrogen annealing on hot-carrier instability of X-Ray irradiated CMOS devices
- C.C.-H. Hsu
- L.K. Wang
- et al.
- 1992
- Journal of Electronic Materials
Effects of X-Ray Irradiation on GIDL in MOSFET's
- Alexandre Acovic
- Charles Ching-Hsiang Hsu
- et al.
- 1992
- IEEE Electron Device Letters