NBTI-Channel Hot Carrier effects in pMOSFETs in advanced CMOS technologies
- G. La Rosa
- F. Guarin
- et al.
- 1997
- IRPS 1997
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58 results for E.F. Crabbé
High-performance 0.08 μm CMOS
- L. Su
- S. Subbanna
- et al.
- 1996
- VLSI Technology 1996
Phase edge lithography for sub 0.1 μm electrical channel length in a 200 MM full CMOS process
- P. Agnello
- T. Newman
- et al.
- 1995
- VLSI Technology 1995
Novel capacitor-less high density low power vertical memory
- S. Tiwari
- H.I. Hanafi
- et al.
- 1994
- DRC 1994
113-GHz f T graded-base SiGe HBTs
- E.F. Crabbé
- B. Mcyerson
- et al.
- 1993
- Device Research Conference 1993
A high performance 0.15 μm CMOS
- G. Shahidi
- J. Warnock
- et al.
- 1993
- VLSI Technology 1993
A SiGe-base PNP ECL circuit technology
- D.L. Harame
- J.H. Comfort
- et al.
- 1993
- VLSI Technology 1993
SiGe heterojunctions: Devices and applications
- Maurizio Arienzo
- James H. Comfort
- et al.
- 1992
- ESSDERC 1992
Novel bipolar transistor isolation structure using combined selective epitaxial growth and planarization technique
- J.N. Burghartz
- J. Wamock
- et al.
- 1992
- ESSDERC 1992
An epitaxial emitter cap, SiGe-base bipolar technology with 22 ps ECL gate delay at liquid nitrogen temperature
- John D. Cresslcr
- James H. Comfort
- et al.
- 1992
- VLSI Technology 1992