Publications

58 results for E.F. Crabbé

High-Low Polysilicon-Emitter SiGe-Base Bipolar Transistors
- - Emmanuel F. Crabbé
  - James H. Comfort
  - et al.
- 1993
- IEEE Electron Device Letters
IIA-3 113-GHz f_T Graded-Base SiGe HBT's
- - E.F. Crabbé
  - B.S. Meyerson
  - et al.
- 1993
- IEEE Transactions on Electron Devices
On the Profile Design and Optimization of Epitaxial Si and SiGe-Base Bipolar Technology for 77 K Applications—Part II: Circuit Performance Issues
- - John D. Cressler
  - Emmanuel F. Crabbé
  - et al.
- 1993
- IEEE Transactions on Electron Devices
Current Gain Rolloff in Graded-Base SiGe Heterojunction Bipolar Transistors
- - Emmanuel F. Crabbé
  - John D. Cressler
  - et al.
- 1993
- IEEE Electron Device Letters
Measurements and simulation of avalanche breakdown in advanced Si bipolar transistors
- - E. Zanoni
  - E.F. Crabbe
  - et al.
- 1992
- IEDM 1992
A high performance epitaxial SiGe-base ECL BiCMOS technology
- - D.L. Harame
  - E.F. Crabbe
  - et al.
- 1992
- IEDM 1992
SiGe heterojunctions: Devices and applications
- - Maurizio Arienzo
  - James H. Comfort
  - et al.
- 1992
- ESSDERC 1992
Novel bipolar transistor isolation structure using combined selective epitaxial growth and planarization technique
- - J.N. Burghartz
  - J. Wamock
  - et al.
- 1992
- ESSDERC 1992
An epitaxial emitter cap, SiGe-base bipolar technology with 22 ps ECL gate delay at liquid nitrogen temperature
- - John D. Cresslcr
  - James H. Comfort
  - et al.
- 1992
- VLSI Technology 1992
73-GHz Self-Aligned SiGe-Base Bipolar Transistors with Phosphorus-Doped Polysilicon Emitters
- - Emmanuel F. Crabbé
  - James H. Comfort
  - et al.
- 1992
- IEEE Electron Device Letters