Lattice contraction due to carbon doping of GaAs grown by metalorganic molecular beam epitaxy
- T.J. De Lyon
- J. Woodall
- et al.
- 1990
- Applied Physics Letters
Paper
Publications
22 results for M.S. Goorsky
Growth and properties of thin GaAs epitaxial layers on Al2O 3
- T.F. Kuech
- A. Segmüller
- et al.
- 1990
- Journal of Applied Physics
Paper