Publications

22 results for M.S. Goorsky

Epitaxial Growth and Selectivity of AlxGa1-xAs Using Novel Metalorganic Precursors
- - M.S. Goorsky
  - T.F. Kuech
  - et al.
- 2019
- JES
Nondestructive analysis of structural defects in wide bandgap II-VI heterostructures
- - M.S. Goorsky
  - S.E. Lindo
  - et al.
- 1996
- Journal of Electronic Materials
High temperature stability and relaxation of UHV/CVD SiGe thin films
- - S. Stiffler
  - Carol Stanis
  - et al.
- 1992
- MRS Fall Meeting 1992
Synthesis of Si_1-yC_y alloys by molecular beam epitaxy
- - Subramanian S. Iyer
  - K. Eberl
  - et al.
- 1992
- Applied Physics Letters
The role of dislocation-dislocation interactions in the relaxation of pseudomorphically strained semiconductors. II. Experiment-The high-temperature relaxation of ultrahigh-vacuum chemical-vapor-deposited SiGe thin films
- - S. Stiffler
  - Carol Stanis
  - et al.
- 1992
- Journal of Applied Physics
Metalorganic vapor phase epitaxy and characterization of boron-doped (Al,Ga)As
- - M.A. Tischler
  - P.M. Mooney
  - et al.
- 1992
- Journal of Applied Physics
Thermal stability of Si_1-xC_x/Si strained layer superlattices
- - M.S. Goorsky
  - Subramanian S. Iyer
  - et al.
- 1992
- Applied Physics Letters
Heavy arsenic doping of silicon grown by atmospheric-pressure chemical vapor deposition at low temperatures
- - P. Agnello
  - T.O. Sedgwick
  - et al.
- 1992
- Applied Physics Letters
The role of dislocation-dislocation interactions in the relaxation of pseudomorphically strained semiconductors. I. Theory
- - S. Stiffler
  - Carol Stanis
  - et al.
- 1992
- Journal of Applied Physics
Photoluminescence from pseudomorphically strained Si/Si1-xGex multiple quantum wells grown on silicon
- - Stefan Zollner
  - R.T. Collins
  - et al.
- 1992
- SPIE Semiconductors 1992