Characterization of epitaxial GaAs and AlxGa1-xAs layers doped with oxygen
- M.S. Goorsky
- T.F. Kuech
- et al.
- 1991
- Applied Physics Letters
Paper
Publications
22 results for M.S. Goorsky
Determination of epitaxial AlxGa1-xAs composition from x-ray diffraction measurements
- M.S. Goorsky
- T.F. Kuech
- et al.
- 1991
- Applied Physics Letters
PaperCharacterization of Si/SiGe strained-layer superlattices grown by ultrahigh vacuum/chemical vapor deposition technique
- P.J. Wang
- M.S. Goorsky
- et al.
- 1991
- Applied Physics Letters
PaperEffect of structural parameters on InGaAs/InAlAs 2DEG transport characteristics
- M.A. Tischler
- B.D. Parker
- et al.
- 1991
- Journal of Electronic Materials
PaperSelective growth of silicon-germanium alloys by atmospheric-pressure chemical vapor deposition at low temperatures
- P. Agnello
- T.O. Sedgwick
- et al.
- 1991
- Applied Physics Letters
PaperStrain relaxation in GeSi layers with uniform and graded composition
- S.C. Jain
- P. Balk
- et al.
- 1991
- ESSDERC 1991
Conference paperSelective epitaxy of GaAs, AlxGa1-xAs, and InxGa1-xAs
- T.F. Kuech
- M.S. Goorsky
- et al.
- 1991
- Journal of Crystal Growth
PaperDoping-Induced Bandwidth Enhancement in Metal-Semiconductor-Metal Photodetectors
- J.H. Burroughes
- D.L. Rogers
- et al.
- 1991
- IEEE Photonics Technology Letters
PaperStrain relaxation in GeSi layers with uniform and graded composition
- S.C. Jain
- P. Balk
- et al.
- 1991
- Microelectronic Engineering
PaperAcceptor doping of (Al,Ga)As using carbon by metalorganic vapor phase epitaxy
- M.A. Tischler
- R.M. Potemski
- et al.
- 1991
- Journal of Crystal Growth
Paper