Selective dry etching of germanium with respect to silicon and vice versa
- G.S. Oehrlein
- T.D. Bestwick
- et al.
- 2019
- JES
Paper
Publications
11 results for T.D. Bestwick
Photoluminescence characterization of plasma exposed silicon surfaces
- A. Henry
- B. Monemar
- et al.
- 1991
- Journal of Applied Physics
PaperNonintrusive wafer temperature measurement using in situ ellipsometry
- G.M.W. Kroesen
- G.S. Oehrlein
- et al.
- 1991
- Journal of Applied Physics
PaperInteractive effects in the reactive ion etching of SiGe alloys
- G.S. Oehrlein
- Y. Zhang
- et al.
- 1991
- Applied Physics Letters
PaperReactive ion etching of SiGe alloys using HBr
- Tim D. Bestwick
- Gottlieb S. Oehrlein
- et al.
- 1991
- Applied Physics Letters
PaperStudies of the reactive ion etching of SiGe alloys
- G.S. Oehriein
- G.M.W. Kroesen
- et al.
- 1991
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
PaperCryogenic reactive ion etching of silicon in SF6
- Tim D. Bestwick
- Gottlieb S. Oehrlein
- et al.
- 1990
- Applied Physics Letters
PaperSelective dry etching of silicon with respect to germanium
- G.S. Oehrlein
- T.D. Bestwick
- et al.
- 1990
- Applied Physics Letters
PaperReactive ion etching of silicon using bromine containing plasmas
- Tim D. Bestwick
- Gottlieb S. Oehrlein
- 1990
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
PaperStudy of oxygen addition to CF3Br reactive ion etching plasmas: Effects on silicon surface chemistry and etching behavior
- T.D. Bestwick
- G.S. Oehrlein
- et al.
- 1989
- Applied Physics Letters
Paper