Publications

47 results for James H. Comfort

113-GHz f _T graded-base SiGe HBTs
- - E.F. Crabbé
  - B. Mcyerson
  - et al.
- 1993
- Device Research Conference 1993
SPIRIT - A bipolar/BiCMOS isolation technology for high-performance VLSI
- - J.N. Burghartz
  - A.O. Cifuentes
  - et al.
- 1993
- VLSI Technology 1993
A SiGe-base PNP ECL circuit technology
- - D.L. Harame
  - J.H. Comfort
  - et al.
- 1993
- VLSI Technology 1993
A room temperature 0.1 μm CMOS on SOI
- - G. Shahidi
  - C. Blair
  - et al.
- 1993
- VLSI Technology 1993
A high performance 0.15 μm CMOS
- - G. Shahidi
  - J. Warnock
  - et al.
- 1993
- VLSI Technology 1993
IIA-3 113-GHz f_T Graded-Base SiGe HBT's
- - E.F. Crabbé
  - B.S. Meyerson
  - et al.
- 1993
- IEEE Transactions on Electron Devices
High-Low Polysilicon-Emitter SiGe-Base Bipolar Transistors
- - Emmanuel F. Crabbé
  - James H. Comfort
  - et al.
- 1993
- IEEE Electron Device Letters
High-Performance Devices for a 0.15-μm CMOS Technology
- - G. Shahidi
  - James Warnock
  - et al.
- 1993
- IEEE Electron Device Letters
Current Gain Rolloff in Graded-Base SiGe Heterojunction Bipolar Transistors
- - Emmanuel F. Crabbé
  - John D. Cressler
  - et al.
- 1993
- IEEE Electron Device Letters
On the Profile Design and Optimization of Epitaxial Si and SiGe-Base Bipolar Technology for 77 K Applications—Part II: Circuit Performance Issues
- - John D. Cressler
  - Emmanuel F. Crabbé
  - et al.
- 1993
- IEEE Transactions on Electron Devices