In situ buried GaInAs/InP quantum dot arrays by selective area metalorganic vapor phase epitaxy
- Yvan D. Galeuchet
- Hugo Rothuizen
- et al.
- 1991
- Applied Physics Letters
Paper
Publications
7 results for Yvan D. Galeuchet
MOVPE on patterned substrates: A new fabrication method for nanometer structure devices
- Yvan D. Galeuchet
- Hugo Rothuizen
- et al.
- 1991
- ESSDERC 1991
Conference paperSelective area MOVPE of GaInAs/InP heterostructures on masked and nonplanar (100) and {111} substrates
- Y.D. Galeuchet
- P. Roentgen
- 1991
- Journal of Crystal Growth
PaperMOVPE on patterned substrates: a new fabrication method for nanometer structure devices
- Yvan D. Galeuchet
- Hugo Rothuizen
- et al.
- 1991
- Microelectronic Engineering
PaperGaInAs/InP selective area metalorganic vapor phase epitaxy for one-step-grown buried low-dimensional structures
- Y.D. Galeuchet
- P. Roentgen
- et al.
- 1990
- Journal of Applied Physics
PaperIndium adatom migration during molecular beam epitaxial growth of strained InGaAs/GaAs single quantum wells
- D.J. Arent
- S. Nilsson
- et al.
- 1989
- Applied Physics Letters
PaperBuried GaInAs/InP layers grown on nonplanar substrates by one-step low-pressure metalorganic vapor phase epitaxy
- Yvan D. Galeuchet
- Peter Roentgen
- et al.
- 1988
- Applied Physics Letters
Paper