Selective area MOVPE of GaInAs/InP heterostructures on masked and nonplanar (100) and {111} substrates

GaInAs/InP heterostructures have been grown by low-pressure metalorganic vapor phase epitaxy on nonplanar and SiO2 masked (100), {111}A and {111}B InP substrates, patterned with stripes of different width, spacing and orientation. On (100) substrates, the growth rate of both materials is found to be strongly dependent on the mask design. Using low-temperature cathodoluminescence, we show that the stoichiometry of the GaInAs layers is also strongly influenced by the local growth environment. On partly masked {111} nonplanar substrates, we find that lateral growth takes place and that the epilayers form stable {111} surfaces which planarize the grooves. This technique is shown to be promising for the fabrication of one-step grown buried GaInAs quantum well wire arrays. © 1991.