Ultrafast electron dynamics at semiconductor surfaces and interfaces studied with subpicosecond laser photoemission
- R. Haight
- M. Baeumler
- et al.
- 2004
- Surface and Interface Analysis
Paper
Publications
11 results for J.A. Silberman
Valence-band-edge shift due to doping in p+ GaAs
- J.A. Silberman
- T.J. De Lyon
- et al.
- 1991
- Applied Physics Letters
PaperFermi level pinning at epitaxial Si on GaAs(100) interfaces
- J.A. Silberman
- T.J. De Lyon
- et al.
- 1991
- Applied Physics Letters
PaperElectronic structure and dynamics of thin Ge/GaAs(110) heterostructures
- R. Haight
- J.A. Silberman
- 1990
- Applied Physics Letters
PaperSurface intervalley scattering on GaAs(110) studied with picosecond laser photoemission
- R. Haight
- J.A. Silberman
- 1990
- Applied Surface Science
PaperSurface intervalley scattering on GaAs(110): Direct observation with picosecond laser photoemission
- R. Haight
- J.A. Silberman
- 1989
- Physical Review Letters
PaperPhotoemission with Picosecond Lasers: Fast Electron IDynamics at the GaAs (110) Surface
- Richard Haight
- Joel A. Silberman
- 1989
- IEEE JQE
PaperNovel system for picosecond photoemission spectroscopy
- R. Haight
- J.A. Silberman
- et al.
- 1988
- Review of Scientific Instruments
PaperPicosecond dynamics of the gaas (110) surface studied with laser photoemission
- R. Haight
- J.A. Silberman
- et al.
- 1989
- Proceedings of SPIE 1989
Conference paperPhotoemission study of Cd loss and its effect on the electronic structure of etched Hg1-xCdxTe surfaces
- G.P. Carey
- A.K. Wahi
- et al.
- 1987
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Paper