Publications

14 results for D.C. Latulipe

22 nm technology compatible fully functional 0.1 μm ² 6T-sram cell
- - B. Haran
  - A. Kumar
  - et al.
- 2008
- IEDM 2008
Overlay as the key to drive wafer scale 3D integration
- - Steven E. Steen
  - Douglas LaTulipe
  - et al.
- 2007
- Microelectronic Engineering
Advanced gate stacks with fully silicided (FUSI) gates and high-κ dielectrics: Enhanced performance at reduced gate leakage
- - E. Gusev
  - C. Cabral Jr.
  - et al.
- 2004
- IEDM 2004
Charge trapping in aggressively scaled metal gate/high-κ stacks
- - E. Gusev
  - V. Narayanan
  - et al.
- 2004
- IEDM 2004
A 90nm dual damascene hybrid (organic / inorganic) low-k - Copper BEOL integration scheme
- - T. Dalton
  - A. Cowley
  - et al.
- 2003
- ADMETA 2003
Effects of underlayer on performance of bilayer resists for 248-nm lithography
- - Katherina Babich
  - Alessandro Callegari
  - et al.
- 1998
- Microlithography 1998
Fabrication of x-ray lithography masks with optical lithography
- - D. LaTulipe
  - J.R. Maldonado
  - et al.
- 1996
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Comparison of liquid- And vapor-phase silylation processes for 193-nm positive-tone lithography
- - Mark A. Hartney
  - Roderick R. Kunz
  - et al.
- 1993
- Microlithography 1993
Improved Schottky gate characteristics for MOVPE-grown GaAs MESFETs
- - M.A. Tischler
  - D.C. Latulipe
  - et al.
- 1992
- Journal of Crystal Growth
Threshold shifting in pseudomorphic semiconductor-insulator-semiconductor heterostructure field-effect transistors
- - S.L. Wright
  - P. Solomon
  - et al.
- 1991
- Applied Physics Letters