A self-aligned inverse-T gate fully overlapped LDD device for sub-half micron CMOS
- D.S. Wen
- C.C.-H. Hsu
- et al.
- 1989
- IEDM 1989
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11 results for D.S. Zicherman
EXPERIMENTAL TECHNOLOGY AND CHARACTERIZATION OF SELF-ALIGNED 0. 1 mu M-GATE-LENGTH LOW-TEMPERATURE OPERATION NMOS DEVICES.
- G.A. Sai-Halasz
- M.R. Wordeman
- et al.
- 1986
- IEDM 1986
HIGHLY LATCHUP-IMMUNE 1- mu m CMOS TECHNOLOGY FABRICATED WITH 1 Mev ION IMPLANTATION AND SELF-ALIGNED TiSi//2.
- F.S. Lai
- L.K. Wang
- et al.
- 1984
- IEDM 1984
A New “Shift and Ratio” Method for MOSFET Channel-Length Extraction
- Yuan Taur
- D.S. Zicherman
- et al.
- 1992
- IEEE Electron Device Letters
Design and Experimental Technology for 0.1-μm Gate-Length Low-Temperature Operation FET's
- George A. Sai-Halasz
- Matthew R. Wordeman
- et al.
- 1987
- IEEE Electron Device Letters
0.5 μm CMOS devices and circuits fabricated using synchrotron X-ray lithography
- L.K. Wang
- C.H. Hsu
- et al.
- 1989
- VLSI Technology 1989
Submicron CMOS circuit simulation model accurate from liquid nitrogen to room temperature
- H.I. Hanafi
- T.J. Buccelot
- et al.
- 1989
- ESSDERC 1989
0.5 μm CMOS device design and characterization
- H.I. Hanafi
- M.R. Wordeman
- et al.
- 1987
- ESSDERC 1987
Effect of hydrogen annealing on hot-carrier instability of X-Ray irradiated CMOS devices
- C.C.-H. Hsu
- L.K. Wang
- et al.
- 1992
- Journal of Electronic Materials
Design and Characterization of a CMOS Off-Chip Driver/Receiver with Reduced Power-Supply Disturbance
- Hussein I. Hanafi
- Robert H. Dennard
- et al.
- 1992
- IEEE Journal of Solid-State Circuits