Effect of hydrogen annealing on hot-carrier instability of X-Ray irradiated CMOS devices
- C.C.-H. Hsu
- L.K. Wang
- et al.
- 1992
- Journal of Electronic Materials
Paper
Publications
11 results for D.S. Zicherman
A New “Shift and Ratio” Method for MOSFET Channel-Length Extraction
- Yuan Taur
- D.S. Zicherman
- et al.
- 1992
- IEEE Electron Device Letters
PaperDesign and Characterization of a CMOS Off-Chip Driver/Receiver with Reduced Power-Supply Disturbance
- Hussein I. Hanafi
- Robert H. Dennard
- et al.
- 1992
- IEEE Journal of Solid-State Circuits
Paper0.5 μm CMOS devices and circuits fabricated using synchrotron X-ray lithography
- L.K. Wang
- C.H. Hsu
- et al.
- 1989
- VLSI Technology 1989
Conference paperA self-aligned inverse-T gate fully overlapped LDD device for sub-half micron CMOS
- D.S. Wen
- C.C.-H. Hsu
- et al.
- 1989
- IEDM 1989
Conference paperSubmicron CMOS circuit simulation model accurate from liquid nitrogen to room temperature
- H.I. Hanafi
- T.J. Buccelot
- et al.
- 1989
- ESSDERC 1989
Conference paperEXPERIMENTAL TECHNOLOGY AND CHARACTERIZATION OF SELF-ALIGNED 0. 1 mu M-GATE-LENGTH LOW-TEMPERATURE OPERATION NMOS DEVICES.
- G.A. Sai-Halasz
- M.R. Wordeman
- et al.
- 1986
- IEDM 1986
Conference paper0.5 μm CMOS device design and characterization
- H.I. Hanafi
- M.R. Wordeman
- et al.
- 1987
- ESSDERC 1987
Conference paperDesign and Experimental Technology for 0.1-μm Gate-Length Low-Temperature Operation FET's
- George A. Sai-Halasz
- Matthew R. Wordeman
- et al.
- 1987
- IEEE Electron Device Letters
PaperA Highly Latchup-Immune 1-μm CMOS Technology Fabricated with 1-MeV Ion Implantation and Self-Aligned TiSi2
- Fang-Shi J. Lai
- L.K. Wang
- et al.
- 1986
- IEEE T-ED
Paper