Deep levels and band bending at GaP(100) and (110) surfaces
- L.J. Brillson
- I.M. Vitomirov
- et al.
- 1994
- Surface Science
Paper
Publications
19 results for L.J. Brillson
Electronic structure of metal/semiconductor interfaces from cathodoluminescence and soft X-ray photoemission spectroscopies
- L.J. Brillson
- I.M. Vitomirov
- et al.
- 1993
- Applied Surface Science
PaperProcessing and reconstruction effects on Al-GaAs(100) barrier heights
- I.M. Vitomirov
- A. Raisanen
- et al.
- 1993
- Journal of Electronic Materials
PaperEffect of semiconductor growth method and bulk doping on fermi level stabilization for aluminum and gold contacts on n- and p-GaAs(100)
- I.M. Vitomirov
- A. Raisanen
- et al.
- 1993
- Journal of Electronic Materials
PaperControl of as Diffusion using Ultrathin Metal Passivating Layers at GaAs(100) Surfaces
- P.D. Kirchner
- G.D. Pettit
- et al.
- 1993
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Conference paperGeometric ordering, surface chemistry, band bending, and work function at decapped GaAs(100) surfaces
- I.M. Vitomirov
- A. Raisanen
- et al.
- 1992
- Physical Review B
PaperChemical and electronic properties of Al/[vicinal GaAs(100)] and Au/[vicinal GaAs(100)] interfaces
- S. Chang
- I.M. Vitomirov
- et al.
- 1992
- Physical Review B
PaperImpact of surface processing on Al/GaAs(100) interface states
- I.M. Vitomirov
- A. Raisanen
- et al.
- 1992
- Solid State Communications
PaperSurface and interface states for GaAs(100) (1x1) and (4x2)-c(8x2) reconstructions
- I.M. Vitomirov
- A. Raisanen
- et al.
- 1992
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Conference paperCorrelation of deep-level and chemically-active-site densities at vicinal GaAs(100)-Al interfaces
- S. Chang
- I.M. Vitomirov
- et al.
- 1991
- Physical Review B
Paper