Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures
- M.R. Melloch
- N. Otsuka
- et al.
- 1990
- Applied Physics Letters
Publications
31 results for Alan C. Warren
Arsenic precipitates and the semi-insulating properties of GaAs buffer layers grown by low-temperature molecular beam epitaxy
- Alan C. Warren
- J. Woodall
- et al.
- 1990
- Applied Physics Letters
Epi-GaAs surface treatment - impact of mixed phases on device performance
- Alan C. Warren
- J. Woodall
- 1989
- ECS Meeting 1989
The electronic properties and control of semiconductor interfaces
- J. Woodall
- P.D. Kirchner
- et al.
- 1990
- Corrosion Science
Complementary p- and n-channel quantum-well MI3SFET's
- R.A. Kiehl
- M.A. Olson
- et al.
- 1988
- IEDM 1988
Masked, anisotropic thermal etching and regrowth for in situ patterning of compound semiconductors
- Alan C. Warren
- J. Woodall
- et al.
- 1987
- Applied Physics Letters
Magnetoconductance oscillations of a quasi-one-dimensional electron gas in a parabolic transverse potential
- S.B. Kaplan
- Alan C. Warren
- 1986
- Physical Review B
Quasi one-dimensional conduction in multiple, parallel inversion lines
- Alan C. Warren
- D.A. Antoniadis
- et al.
- 1986
- Physical Review Letters
Semi-Classical Calculation of Charge Distributions in Ultra-Narrow Inversion Lines
- Alan C. Warren
- Dimitri A. Antoniadis
- et al.
- 1986
- IEEE Electron Device Letters
Unpinned (100) GaAs surfaces in air using photochemistry
- S.D. Offsey
- J. Woodall
- et al.
- 1986
- Applied Physics Letters