Role of molecular beam epitaxy in the optoelectronic field
- H.P. Meier
- 1991
- Materials Science and Engineering B
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68 results for H.P. Meier
Optical studies of vertical ambipolar transport and interface recombination velocities in GaAs/Al0.5Ga0.5As double-quantum-well heterostructures
- H. Hillmer
- A. Forchel
- et al.
- 1991
- Physical Review B
Interior contacts for probing the equilibrium between magnetic edge channels in the quantum Hall effect
- J. Faist
- P. Guéret
- et al.
- 1991
- Physical Review B
Very High-Power (425 Mw) Algaas Sqw-Grinsch Ridge Laser with Frequency-Doubled Output (41 Mw At 428 Nm)
- Heinz Jaeckel
- Gian-Luca Bona
- et al.
- 1991
- IEEE JQE
Indium Migration and Controlled Lateral Bandgap Variations in High-Power Strained Layer Ingaas-Algaas Lasers Grown on Nonplanar Substrates
- Luigi R. Brovelli
- Douglas J. Arent
- et al.
- 1991
- IEEE JQE
Tunneling through asymmetric double-barrier quantum-well heterostructures
- C. Rossel
- P. Guéret
- et al.
- 1990
- Journal of Applied Physics
High-power single-mode strained single quantum well InGaAs/AlGaAs lasers grown by molecular beam epitaxy on nonplanar substrates
- D.J. Arent
- L. Brovelli
- et al.
- 1990
- Applied Physics Letters
Nanometer resolution in luminescence microscopy of III-V heterostructures
- D.L. Abraham
- A. Veider
- et al.
- 1990
- Applied Physics Letters
Tunneling microscopy and spectroscopy of molecular beam epitaxy grown GaAs-AlGaAs interfaces
- O. Albrektsen
- D.J. Arent
- et al.
- 1990
- Applied Physics Letters
Time-resolved investigations of sidewall recombination in dry-etched GaAs wires
- G. Mayer
- B.E. Maile
- et al.
- 1990
- Applied Physics Letters