Spectroscopic ellipsometry of E1-like transitions in nanometer-thickness Ge layers
- J. Freeouf
- J.C. Tsang
- et al.
- 1990
- Physical Review Letters
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111 results for F.K. LeGoues
Long-range order in thick, unstrained Si0.5Ge0.5 epitaxial layers
- F.K. LeGoues
- V.P. Kesan
- et al.
- 1990
- Physical Review Letters
Dopant redistribution during oxidation of SiGe
- F.K. LeGoues
- R. Rosenberg
- et al.
- 1989
- Applied Physics Letters
Kinetics and mechanism of oxidation of SiGe: Dry versus wet oxidation
- F.K. LeGoues
- R. Rosenberg
- et al.
- 1989
- Applied Physics Letters
Oxidation studies of SiGe
- F.K. LeGoues
- R. Rosenberg
- et al.
- 1989
- Journal of Applied Physics
Thermal relaxation of pseudomorphic Si-Ge superlattices by enhanced diffusion and dislocation multiplication
- Subramanian S. Iyer
- F. Legoues
- 1989
- Journal of Applied Physics
Novel strain-induced defect in thin molecular-beam epitaxy layers
- F. Legoues
- M. Copel
- et al.
- 1989
- Physical Review Letters
In situ studies of microstructural changes in YBa2Cu3O7−x during O and He irradiation
- F. Legoues
- M.O. Ruault
- et al.
- 1989
- Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
Structure of the Si(111)/CaF2 interface
- R.M. Tromp
- M.C. Reuter
- et al.
- 1989
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Diffusion of Sb, Ga, Ge, and (As) in TiSi2
- P. Gas
- G. Scilla
- et al.
- 1988
- Journal of Applied Physics