Strain-relief mechanism in surfactant-grown epitaxial germanium films on Si(111)
- F.K. LeGoues
- M. Horn-Von Hoegen
- et al.
- 1991
- Physical Review B
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111 results for F.K. LeGoues
Diffusion versus oxidation rates in silicon-germanium alloys
- J. Eugène
- F.K. LeGoues
- et al.
- 1991
- Applied Physics Letters
Characterization of Si/SiGe strained-layer superlattices grown by ultrahigh vacuum/chemical vapor deposition technique
- P.J. Wang
- M.S. Goorsky
- et al.
- 1991
- Applied Physics Letters
High-quality GaAs on sawtooth-patterned Si substrates
- K. Ismail
- F. Legoues
- et al.
- 1991
- Applied Physics Letters
Hydrogen segregation and trapping in the Al/Si(111) interface
- Joyce C. Liu
- A.D. Marwick
- et al.
- 1991
- Physical Review B
Si/SiGe heterostructures grown on SOI substrates by MBE for integrated optoelectronics
- V.P. Kesan
- P.G. May
- et al.
- 1991
- Journal of Crystal Growth
Microstructure and strain relief of Ge films grown layer by layer on Si(001)
- F. Legoues
- M. Copel
- et al.
- 1990
- Physical Review B
Magnetically filtered low-loss scanning electron microscopy
- Oliver C. Wells
- Francoise K. LeGoues
- et al.
- 1990
- Applied Physics Letters
Effect of F co-implant during annealing of Be-implanted GaAs
- P.E. Hallali
- H. Baratte
- et al.
- 1990
- Applied Physics Letters
Dopant redistribution during oxidation of SiGe
- F.K. LeGoues
- R. Rosenberg
- et al.
- 1989
- Applied Physics Letters