Diffusion of boron, phosphorus, and arsenic implanted in thin films of cobalt disilicide
- O. Thomas
- P. Gas
- et al.
- 1988
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
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111 results for F.K. LeGoues
On pepresentation of the QP zone solvus in Al‒Ag alloys
- K.B. Nexander
- F.K. LeGoues
- et al.
- 1988
- Scripta Metallurgica
Electrical measurement of the formation of the platinum-rich metal silicides by metal-silicon reaction
- P. Gas
- J. Tardy
- et al.
- 1987
- Applied Physics Letters
Properties of epitaxial films of YBa2Cu3O7-
- P. Chaudhari
- R.T. Collins
- et al.
- 1987
- Physical Review B
Nonequilibrium boron doping effects in low-temperature epitaxial silicon films
- B.S. Meyerson
- F. Legoues
- et al.
- 1987
- Applied Physics Letters
Ion beam amorphization of YBa2Cu3Ox
- G.J. Clark
- F. Legoues
- et al.
- 1987
- Applied Physics Letters
Disilicide solid solutions, phase diagram, and resistivities. II. TaSi 2-WSi2
- P. Gas
- J. Tardy
- et al.
- 1987
- Journal of Applied Physics
Formation of intermediate phases, Ni3Si2 and Pt 6Si5: Nucleation, identification, and resistivity
- P. Gas
- F.M. D'Heurle
- et al.
- 1986
- Journal of Applied Physics
Influence of thin SiO2 interlayers on chemical reaction and microstructure at the Ni/Si(111) interface
- M. Liehr
- H. Lefakis
- et al.
- 1986
- Physical Review B
Schottky barrier, electronic states and microstructure at Ni silicide-silicon interfaces
- P.S. Ho
- M. Liehr
- et al.
- 1986
- Surface Science