Publications

111 results for F.K. LeGoues

Ion beam amorphization of YBa₂Cu₃O_x
- - G.J. Clark
  - F. Legoues
  - et al.
- 1987
- Applied Physics Letters
The microstructure of high-critical current superconducting films
- - P. Chaudhari
  - F.K. LeGoues
  - et al.
- 1987
- Science
Disilicide solid solutions, phase diagram, and resistivities. II. TaSi ₂-WSi₂
- - P. Gas
  - J. Tardy
  - et al.
- 1987
- Journal of Applied Physics
Formation of intermediate phases, Ni₃Si₂ and Pt ₆Si₅: Nucleation, identification, and resistivity
- - P. Gas
  - F.M. D'Heurle
  - et al.
- 1986
- Journal of Applied Physics
CHARACTERIZATION OF IC DEVICES FABRICATED IN LOW TEMPERATURE (550 degree C) EPITAXY BY UHV/CVD TECHNIQUE.
- - T.N. Nguyen
  - D.L. Harame
  - et al.
- 1985
- IEDM 1985
Influence of thin SiO2 interlayers on chemical reaction and microstructure at the Ni/Si(111) interface
- - M. Liehr
  - H. Lefakis
  - et al.
- 1986
- Physical Review B
Schottky barrier, electronic states and microstructure at Ni silicide-silicon interfaces
- - P.S. Ho
  - M. Liehr
  - et al.
- 1986
- Surface Science
Schottky barrier heights of epitaxial Ni-silicides on Si(111)
- - M. Liehr
  - P.E. Schmid
  - et al.
- 1986
- JVSTA
Stacking faults in WSi₂: Resistivity effects
- - F.M. d'Heurle
  - F.K. LeGoues
  - et al.
- 1986
- Applied Physics Letters
Atomic structure of the epitaxial Al–Si interface
- - F. Legoues
  - W. Krakow
  - et al.
- 1986
- Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties