Publications

20 results for F.J. Hohn

Fully-scaled 0.25-micron bipolar technology using variable shaped electron-beam lithography
- - Philip J. Coane
  - Kaolin G. Chiong
  - et al.
- 1993
- Microlithography 1993
Fabrication and characterization of compact 100nm scale metal oxide semiconductor field effect transistors
- - C. Reeves
  - S.J. Wind
  - et al.
- 1993
- Microelectronic Engineering
A Scaled 0.25- μm Bipolar Technology Using Full e-Beam Lithography
- - John D. Cressler
  - James Warnock
  - et al.
- 1992
- IEEE Electron Device Letters
A full E-beam 0.25 mu m bipolar technology with sub-25 ps ECL gate delay
- - J. Warnock
  - J.D. Cressler
  - et al.
- 1991
- IEDM 1991
Lithographic performance of an EL-3 system at 0.25μm groundrules
- - T. Newman
  - M.G.R. Thomson
  - et al.
- 1991
- Microelectronic Engineering
Electron beam lithography-tools and applications
- - F.J. Hohn
- 1991
- Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Resist patterning for sub-quarter-micrometer device fabrications (Invited Paper)
- - K. Chiong
  - F.J. Hohn
- 1990
- Microlithography 1990
Electron beam lithography, directions in direct write and mask making
- - F.J. Hohn
- 1990
- Microlithography 1990
Application of variable shaped electron beam technology to the development of 0.5 micron CMOS technology with extensions to 0.25 micron
- - P. Coane
  - P. Rudeck
  - et al.
- 1989
- Microelectronic Engineering
Fully scaled 0.5μm MOS circuits by synchrotron radiation X-ray lithography: Mask fabrication and chraterization
- - R. Viswanathan
  - R.E. Acosta
  - et al.
- 1989
- Microelectronic Engineering