On the Transient Operation of Partially Depleted SOI NMOSFET's
- Jacques Gautier
- Jack Y.-C. Sun
- 1995
- IEEE Electron Device Letters
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90 results for Jack Y. C. Sun
An Epitaxial Emitter-Cap SiGe-Base Bipolar Technology Optimized for Liquid-Nitrogen Temperature Operation
- John D. Cressler
- Emmanuel F. Crabbé
- et al.
- 1994
- IEEE Electron Device Letters
Current Gain Rolloff in Graded-Base SiGe Heterojunction Bipolar Transistors
- Emmanuel F. Crabbé
- John D. Cressler
- et al.
- 1993
- IEEE Electron Device Letters
High-Low Polysilicon-Emitter SiGe-Base Bipolar Transistors
- Emmanuel F. Crabbé
- James H. Comfort
- et al.
- 1993
- IEEE Electron Device Letters
High-Performance Devices for a 0.15-μm CMOS Technology
- G. Shahidi
- James Warnock
- et al.
- 1993
- IEEE Electron Device Letters
A Scaled 0.25- μm Bipolar Technology Using Full e-Beam Lithography
- John D. Cressler
- James Warnock
- et al.
- 1992
- IEEE Electron Device Letters
Partial-SOI Isolation Structure for Reduced Bipolar Transistor Parasitics
- Joachim N. Burghartz
- John D. Cressler
- et al.
- 1992
- IEEE Electron Device Letters
73-GHz Self-Aligned SiGe-Base Bipolar Transistors with Phosphorus-Doped Polysilicon Emitters
- Emmanuel F. Crabbé
- James H. Comfort
- et al.
- 1992
- IEEE Electron Device Letters
High-Performance Bipolar Technology for Improved ECL Power Delay
- J. Warnock
- J.D. Cressler
- et al.
- 1991
- IEEE Electron Device Letters
Novel In-Situ Doped Polysilicon Emitter Process with Buried Diffusion Source (Bds)
- Joachim N. Burghartz
- Andrew C. Megdanis
- et al.
- 1991
- IEEE Electron Device Letters