On the investigation of 1/F noise of polysilicon emitter P-N-P transistors in a C-BiCMOS technology

Via forward current stress and reverse breakdown stress to intentionally change the interfacial layer properties, the 1/f noise of base current in polysilicon emitter p-n-p transistors in a C-BiCMOS technology has been investigated. The results show that the 1/f noise of base current is proportional to Ib2, and the 1/f noise from majority carrier transport through polysilicon grain boundaries is a primary source of 1/f noise.