Monte Carlo Simulation of Transport in Technologically Significant Semiconductors of the Diamond and Zinc-Blende Structures—Part I Homogeneous Transport
- Massimo V. Fischetti
- 1991
- IEEE T-ED
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102 results for Massimo V. Fischetti
The use of simulation in semiconductor technology development
- D.C. Cole
- E.M. Buturla
- et al.
- 1990
- Solid State Electronics
Coulombic and neutral electron trapping centers in SiO2
- D.A. Buchanan
- M.V. Fischetti
- et al.
- 1989
- Applied Surface Science
The physics of hot-electron degradation of Si MOSFET's: Can we understand it?
- M.V. Fischetti
- S.E. Laux
- et al.
- 1989
- Applied Surface Science
Monte Carlo simulation of hot-carrier transport in real semiconductor devices
- M.V. Fischetti
- S.E. Laux
- et al.
- 1989
- Solid State Electronics
Monte carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects
- Massimo V. Fischetti
- Steven E. Laux
- 1988
- Physical Review B
Vacuum emission of hot electrons from silicon dioxide at low temperatures
- D.J. DiMaria
- M.V. Fischetti
- 1988
- Journal of Applied Physics
Hot electrons in SiO2: ballistic to steady-state transport
- M.V. Fischetti
- D.J. DiMaria
- 1988
- Solid State Electronics
Ballistic electron transport in thin silicon dioxide films
- M.V. Fischetti
- D.J. Dimaria
- et al.
- 1987
- Physical Review B
Electron avalanche injection on 10-nm dielectric films
- Leonello Dori
- Maurizio Arienzo
- et al.
- 1987
- Journal of Applied Physics