On the enhanced electron mobility in strained-silicon inversion layers
- M.V. Fischetti
- F. Gámiz
- et al.
- 2002
- Journal of Applied Physics
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102 results for Massimo V. Fischetti
Effective electron mobility in Si inversion layers in metal-oxide-semiconductor systems with a high-κ insulator: The role of remote phonon scattering
- Massimo V. Fischetti
- Deborah A. Neumayer
- et al.
- 2001
- Journal of Applied Physics
Why hot carrier emission based timing probes will work for 50 nm, 1V CMOS technologies
- J.C. Tsang
- M.V. Fischetti
- 2001
- Microelectronics Reliability
Monte Carlo simulation of double-gate silicon-on-insulator inversion layers: The role of volume inversion
- F. Gamiz
- M.V. Fischetti
- 2001
- Journal of Applied Physics
Full-band simulation of indirect phonon assisted tunneling in a silicon tunnel diode with delta-doped contacts
- Cristian Rivas
- Roger Lake
- et al.
- 2001
- Applied Physics Letters
Long-range Coulomb interactions in small Si devices. Part I: Performance and reliability
- M.V. Fischetti
- S.E. Laux
- 2001
- Journal of Applied Physics
Long-range Coulomb interactions in small Si devices. Part II. Effective electron mobility in thin-oxide structures
- M.V. Fischetti
- 2001
- Journal of Applied Physics
Performance degradation of small silicon devices caused by long-range Coulomb interactions
- M.V. Fischetti
- S.E. Laux
- 2000
- Applied Physics Letters
Comment on "Influence of the doping element on the electron mobility in n silicon" [J. Appl. Phys. 83, 3096 (1998)]
- M.V. Fischetti
- S.E. Laux
- 1999
- Journal of Applied Physics
Master-equation approach to the study of electronic transport in small semiconductor devices
- M.V. Fischetti
- 1999
- Physical Review B - CMMP