ReviewComment on "Influence of the doping element on the electron mobility in n silicon" [J. Appl. Phys. 83, 3096 (1998)]M.V. Fischetti, S.E. LauxJournal of Applied Physics
Conference paperFull-band Monte Carlo simulation of high-energy transport and impact ionization of electrons and holes in Ge, Si, and GaAsM.V. Fischetti, N. Sano, et al.SISPAD 1996
Conference paperA 12.8 mW/ channel cryogenic RF-AWG in 14nm FinFET for transmon qubit controlS. Chakraborty, K. Tien, et al.ESSERC 2024
PaperSoft-x-ray induced core-level photoemission as a probe of hot-electron dynamics in SiO2F.R. McFeely, E. Cartier, et al.Physical Review Letters
