Comment on "Influence of the doping element on the electron mobility in n silicon" [J. Appl. Phys. 83, 3096 (1998)]
- M.V. Fischetti
- S.E. Laux
- 1999
- Journal of Applied Physics
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102 results for Massimo V. Fischetti
Master-equation approach to the study of electronic transport in small semiconductor devices
- M.V. Fischetti
- 1999
- Physical Review B - CMMP
Hole-initiated impact ionization and split-off band in Ge, Si, GaAs, InAs, and InGaAs
- N. Sano
- M.V. Fischetti
- et al.
- 1998
- IWCE 1998
A master equation approach to the simulation of electron transport in small semiconductor devices
- M.V. Fischetti
- 1998
- IWCE 1998
Theory of electron transport in small semiconductor devices using the Pauli master equation
- M.V. Fischetti
- 1998
- Journal of Applied Physics
Theory of electron transport in small semiconductor devices using the Pauli master equation
- M.V. Fischetti
- 1998
- VLSI Design
Monte Carlo and hydrodynamic simulation of a one dimensional n+-n- N+ silicon diode
- O. Muscato
- R.M. Pidatella
- et al.
- 1998
- VLSI Design
Hole mobility improvement in silicon-on-insulator and bulk silicon transistors using local strain
- S. Tiwari
- M.V. Fischetti
- et al.
- 1997
- IEDM 1997
Monte Carlo study of velocity overshoot in switching a 0.1-micron CMOS inverter
- S.E. Laux
- M.V. Fischetti
- 1997
- IEDM 1997
Light emission during direct and Fowler-Nordheim tunneling in ultra thin MOS tunnel junctions
- E. Cartier
- J.C. Tsang
- et al.
- 1997
- Microelectronic Engineering