Parameter and Reactor Dependence of Selective Oxide RIE in CF4 + H2
- L.M. Ephroth
- E.J. Petrillo
- 2019
- JES
Paper
Publications
13 results for E.J. Petrillo
Sidewall Spacer Technology for MOS and Bipolar Devices
- Sang H. Dhong
- Edward J. Petrillo
- 2019
- JES
PaperNear-Surface Damage and Contamination after CF4/H2 Reactive Ion Etching of Si
- G.S. Oehrlein
- R.M. Tromp
- et al.
- 2019
- JES
PaperA low-power static frequency divider circuit in bipolar technology
- Kai Y. Toh
- Yen C. Tzeng
- et al.
- 1992
- BCTM 1992
Conference paperA Scaled 0.25- μm Bipolar Technology Using Full e-Beam Lithography
- John D. Cressler
- James Warnock
- et al.
- 1992
- IEEE Electron Device Letters
PaperA novel high-performance lateral bipolar on SOI
- G. Shahidi
- D.D. Tang
- et al.
- 1991
- IEDM 1991
Conference paperA full E-beam 0.25 mu m bipolar technology with sub-25 ps ECL gate delay
- J. Warnock
- J.D. Cressler
- et al.
- 1991
- IEDM 1991
Conference paperHigh-Performance Bipolar Technology for Improved ECL Power Delay
- J. Warnock
- J.D. Cressler
- et al.
- 1991
- IEEE Electron Device Letters
PaperSiGe-base PNP transistors fabricated with N-type UHV/CVD LTE in a 'No Dt' process
- D.L. Harame
- J.M.C. Stork
- et al.
- 1990
- VLSI Technology 1990
Conference paperA Highly Latchup-Immune 1-μm CMOS Technology Fabricated with 1-MeV Ion Implantation and Self-Aligned TiSi2
- Fang-Shi J. Lai
- L.K. Wang
- et al.
- 1986
- IEEE T-ED
Paper