Improved Schottky gate characteristics for MOVPE-grown GaAs MESFETs
- M.A. Tischler
- D.C. Latulipe
- et al.
- 1992
- Journal of Crystal Growth
Paper
Publications
49 results for M.A. Tischler
Anisotropic valence bands in quantum wells: Quantitative comparison of theory and experiment
- J.A. Kash
- M. Zachau
- et al.
- 1992
- Physical Review Letters
PaperLateral Ga0.47In0.53As and GaAs p-i-n Photodetectors by Self-Aligned Diffusion
- Sandip Tiwari
- Jeremy Burroughes
- et al.
- 1992
- IEEE Photonics Technology Letters
PaperPhotoinduced hydrogen loss from porous silicon
- R.T. Collins
- M.A. Tischler
- et al.
- 1992
- Applied Physics Letters
PaperOn the relationship of porous silicon and siloxene
- M.A. Tischler
- R.T. Collins
- 1992
- Solid State Communications
PaperLateral p-i-n photodetectors with 18 GHz bandwidth at 1.3 μ m wavelength and small bias voltages
- Sandip Tiwari
- Jeremy Burroughes
- et al.
- 1991
- IEDM 1991
Conference paperProperties of SiO2/Si/GaAs structures formed by solid phase epitaxy of amorphous Si on GaAs
- A.C. Callegari
- D.K. Sadana
- et al.
- 1991
- Applied Physics Letters
PaperDetermination of epitaxial AlxGa1-xAs composition from x-ray diffraction measurements
- M.S. Goorsky
- T.F. Kuech
- et al.
- 1991
- Applied Physics Letters
PaperThe temperature dependence of the contact resistivity of the Si/Ni(Mg) nonspiking contact scheme on p-GaAs
- C.C. Han
- X.Z. Wang
- et al.
- 1991
- Journal of Applied Physics
PaperEffect of structural parameters on InGaAs/InAlAs 2DEG transport characteristics
- M.A. Tischler
- B.D. Parker
- et al.
- 1991
- Journal of Electronic Materials
Paper