Conference paper
Optical imaging of picosecond switching in CMOS circuits
J.A. Kash, J.C. Tsang
CLEO 1997
The valence subband dispersion of GaAs/AlGaAs quantum wells is measured with meV accuracy using the recombination of hot electrons at neutral acceptors. This precision, in combination with polarization-dependent matrix elements, allows direct observation and measurement of the warping. The measurements, for in-plane wave vectors which extend over a substantial fraction of the Brillouin zone, are shown to be in very good agreement with kp calculations. © 1992 The American Physical Society.
J.A. Kash, J.C. Tsang
CLEO 1997
J.A. Kash, S. Guha, et al.
CLEO 1996
C.L. Schow, F.E. Doany, et al.
OFC/NFOEC 2008
J.A. Kash, M. Zachau, et al.
SPIE Physics and Simulation of Optoelectronic Devices 1992