Publications

71 results for Mordehai Heiblum

Use of superlattices to realize inverted GaAs/AlGaAs heterojunctions with low-temperature mobility of 2×10⁶ cm²/V s
- - T. Sajoto
  - M. Santos
  - et al.
- 1989
- Applied Physics Letters
High-gain lateral hot-electron device
- - A. Palevski
  - C.P. Umbach
  - et al.
- 1989
- Applied Physics Letters
Uniaxial stress dependence of current-voltage characteristics in GaAs-Al_xGa_1-xAs-GaAs heterojunction barriers
- - S.S. Lu
  - K. Lee
  - et al.
- 1989
- Applied Physics Letters
Inert gas reactive ion etching damage to GaAs using inverted heterojunctions
- - C.M. Knoedler
  - L. Osterling
  - et al.
- 1989
- Journal of Applied Physics
One-dimensional electron gas in GaAs: Periodic conductance oscillations as a function of density
- - U. Meirav
  - M.A. Kastner
  - et al.
- 1989
- Physical Review B
Hot ballistic transport and phonon emission in a two-dimensional electron gas
- - U. Sivan
  - M. Heiblum
  - et al.
- 1989
- Physical Review Letters
Lateral tunneling, ballistic transport, and spectroscopy in a two-dimensional electron gas
- - A. Palevski
  - M. Heiblum
  - et al.
- 1989
- Physical Review Letters
Observation of single-optical-phonon emission
- - M. Heiblum
  - D. Galbi
  - et al.
- 1989
- Physical Review Letters
High-Gain Pseudomorphic InGaAs Base Ballistic Hot-Electron Device
- - K. Seo
  - Mordehai Heiblum
  - et al.
- 1989
- IEEE Electron Device Letters
Electron energy spectroscopy and the observation of ballistic transport of hot electrons in the plane of a 2DEG
- - A. Palevski
  - M. Heiblum
  - et al.
- 1989
- IEEE T-ED