Oxidation studies of SiGe
- F.K. LeGoues
- R. Rosenberg
- et al.
- 1989
- Journal of Applied Physics
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218 results for F.J. Himpsel
Resonant inverse-photoemission study of layer-dependent surface states at the epitaxial GaAs(110)-Bi interface
- A.B. McLean
- F.J. Himpsel
- 1989
- Physical Review B
Empty states near the Fermi level in Bi2Sr2CaCu2O8
- W. Drube
- F.J. Himpsel
- et al.
- 1989
- Physical Review B
Band dispersion of an interface state: CaF2/Si(111)
- A.B. McLean
- F.J. Himpsel
- 1989
- Physical Review B
Orientation of the O2p holes in Bi2Sr2Ca1 Cu2O8
- F.J. Himpsel
- G.V. Chandrashekhar
- et al.
- 1988
- Physical Review B
Microscopic structure of the SiO2/Si interface
- F.J. Himpsel
- F.R. McFeely
- et al.
- 1988
- Physical Review B
Unoccupied surface states of (1×1) Sb overlayers on GaAs(110) and InP(110)
- W. Drube
- F.J. Himpsel
- 1988
- Physical Review B
Perspectives. Inverse photoemission
- F.J. Himpsel
- 1988
- Journal of Physics and Chemistry of Solids
Dielectrics on semiconductors
- F.J. Himpsel
- U.O. Karlsson
- et al.
- 1988
- Materials Science and Engineering B
Oxygen removal from Si via reaction with adsorbed Ge
- J.F. Morar
- B.S. Meyerson
- et al.
- 1987
- Applied Physics Letters