S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
The early stages in the formation of the InP(110)-oxide interface have been studied using high energy resolution photoemission with synchrotron radiation. Both unexcited and excited oxygen were used. Changes were observed in P 2p, In 4d and valence-band spectra. The oxidation of InP appears spatially inhomogeneous. Three stages were observed: a precursor chemisorption stage, a nucleation process, the formation of an oxide layer. © 1986.
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
J.C. Marinace
JES
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
T.N. Morgan
Semiconductor Science and Technology