Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Voltages have been measured in the scanning electron microscope by passing the secondary electrons through an electrostatic energy analyser between the specimen and the electron detector. Experimental results are described in which (i) some sources of image contrast are investigated and (ii) the reverse characteristic of a p-into-n diffused device is measured by a contactless method.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Mark W. Dowley
Solid State Communications
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989