Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
Finite element methods were used to mode both the thermal and structural response of the PREVAIL prototype mask during exposure heating. Equivalent modeling techniques were used to simulate a variety of pattern density distributions. Temperature rises of 3.8 K were observed in membranes immediately after e-beam exposure. Errors in stitching in both horizontally and vertically adjacent subfields were determined.
T.N. Morgan
Semiconductor Science and Technology
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
J.A. Barker, D. Henderson, et al.
Molecular Physics
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films