Sufi Zafar, A.C. Callegari, et al.
Applied Physics Letters
Paper
Thermal stability of polycrystalline silicon/metal oxide interfaces
Abstract
The thermal stability of polycrystalline silicon/metal oxide interfaces was investigated by using transmission electron microscopy (TEM). TEM showed strong reactions at the poly-Si/metal oxide interface when annealed at 1000°C. It was found that the thermal stability of polycrystalline silicon/metal oxide interface was significantly enhanced when the poly-Si was plasma deposited using silane diluted in He.
Related
Yih-Cheng Shih, Masanori Murakami, et al.
Journal of Applied Physics
E. Gusev, C. Cabral Jr., et al.
IEDM 2004
M. Eizenberg, A.C. Callegari, et al.
Applied Physics Letters