G. Northrop, J.F. Morar, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Paper
Theory of substitutional deep traps in covalent semiconductors
Abstract
The energies of substitutional deep A1 impurity levels in zinc-blende semiconductors are predicted and related to the impurities' atomic energies and to host dangling bond (ideal vacancy) energies. © 1980 The American Physical Society.
Related
Otto F. Sankey, Harold P. Hjalmarson, et al.
Physical Review Letters
Conference paper
NITROGEN ISOELECTRONIC TRAP IN GaAs.
D.J. Wolford, J.A. Bradley, et al.
ICDS 1984
G.D. Gilliland, D.J. Wolford, et al.
Applied Physics Letters