Theory of substitutional deep traps in covalent semiconductors

Harold P. Hjalmarson; P. Vogl; D.J. Wolford; John D. Dow

doi:10.1103/PhysRevLett.44.810

Physical Review Letters

Paper

24 Mar 1980

Theory of substitutional deep traps in covalent semiconductors

View publication

Abstract

The energies of substitutional deep A1 impurity levels in zinc-blende semiconductors are predicted and related to the impurities' atomic energies and to host dangling bond (ideal vacancy) energies. © 1980 The American Physical Society.

Paper

Radiative recombination in MBE-prepared epitaxial Si and Si_1-xGe_x layers

G. Northrop, D.J. Wolford, et al.

Solid State Communications

Paper

Homogeneous chemical vapor deposition of amorphous semiconductor thin films

B.A. Scott, W.L. Olbricht, et al.

Journal of Non-Crystalline Solids

Paper

Minority-carrier recombination kinetics and transport in]] surface-free" GaAs/Al_xGa_1-xAs double heterostructures

G.D. Gilliland, D.J. Wolford, et al.

Journal of Applied Physics

Paper

Optically determined minority-carrier transport in GaAs/AlxGa1-xAs heterostructures

D.J. Wolford, G.D. Gilliland, et al.

Physical Review B

View all publications

Abstract

Related

Radiative recombination in MBE-prepared epitaxial Si and Si1-xGex layers

Homogeneous chemical vapor deposition of amorphous semiconductor thin films

Minority-carrier recombination kinetics and transport in]] surface-free" GaAs/AlxGa1-xAs double heterostructures

Optically determined minority-carrier transport in GaAs/AlxGa1-xAs heterostructures

Radiative recombination in MBE-prepared epitaxial Si and Si_1-xGe_x layers

Minority-carrier recombination kinetics and transport in]] surface-free" GaAs/Al_xGa_1-xAs double heterostructures