E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
Paper
The interaction of CF3 radicals and CF3 radical precursors with SiO2 surfaces
Abstract
The interaction between thermally grown SiO2 surfaces and hexafluoroazomethane was studied by means of soft X-ray photoemission. No interactions were observed for dark exposures, however, large exposures with simultaneous UV irradiation produced a surface layer consisting largely of trifluoromethyl radicals, the primary photolysis products of hexafluoroazomethane. The evolution of the surface as a function of annealing temperature is also discussed. © 1988.
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