Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
Existing theoretical models do not account for a number of important electronic properties of oxygen in GaP. I describe here a new (MO) model based on spin multiplets formed from the four neighboring gallium bond orbitals and show that it provides a detailed explanation of these properties in terms of spin- and k-conserving one-electron transitions. © 1983.
T.N. Morgan
Semiconductor Science and Technology
E. Calleja, F. Garcia, et al.
Applied Physics Letters
R.A. Noack, W. Rühle, et al.
Physical Review B
B. Welber, T.N. Morgan
Physical Review