Conference paper
INTERNAL STRUCTURE OF THE NITROGEN BOUND EXCITON IN GaP.
T.N. Morgan
ICDS 1984
This paper considers the effects on the symmetries and binding energies of biexcitons of 1) the short-range interaction (Coulomb and exchange), 2) a multi-valley conduction band and 3) the mass anisotropy of the valleys. It demonstrates that the ground state of the biexciton in a multi-valley semiconductor should be a spin triplet with an antisymmetric valley function and that poly-excitons X x, x>2, should be stable in a material like Si. © 1977 Società Italiana di Fisica.
T.N. Morgan
ICDS 1984
T.N. Morgan
Journal of Physics C: Solid State Physics
T.N. Morgan, H. Maier
Physical Review Letters
T.N. Morgan
Journal of Physics and Chemistry of Solids