Conference paperCurrents, surface potentials, and defect generation in 1.2-1.5 nm oxide MOSFETsS. Tiwari, J.J. Welser, et al.DRC 1998
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PaperTrap creation in silicon dioxide produced by hot electronsD.J. DiMaria, J.W. StasiakJournal of Applied Physics
PaperOxide scaling limit for future logic and memory technologyJ.H. Stathis, D.J. DiMariaMicroelectronic Engineering