Conference paper
Effect of surface nitridation on the Ge/HfO2 interface
R. Garg, D. Misra, et al.
ECS Meeting 2005
We report a study of the desorption behavior of Ga on the GaN(0001) surface and the growth behavior of GaN during molecular beam epitaxy. A desorption activation energy of 2.2±0.2 eV is measured for Ga adatoms. Porous columnar features in the GaN microstructure are observed that are enhanced by higher growth temperatures and eliminated by growing Mg or Si doped GaN. We propose a model for this observation. © 1996 American Institute of Physics.
R. Garg, D. Misra, et al.
ECS Meeting 2005
S. Guha, N.A. Bojarczuk
Electronics Letters
S. Guha, N.A. Bojarczuk, et al.
IEE/LEOS Summer Topical Meetings 1997
F.J. Lamelas, P.H. Fuoss, et al.
Physical Review B