F. Lombardi, F. Tafuri, et al.
Physical Review Letters
We demonstrate that average conduction-band electrons in a wide-band-gap insulator, SiO2, are heated several electronvolts above the conduction-band edge at fields of 5 to 12 MV/cm. The electronic energy distribution appears to be stabilized at these high fields by energy-loss mechanisms other than LO-phonon scattering. © 1984 The American Physical Society.
F. Lombardi, F. Tafuri, et al.
Physical Review Letters
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