Takashi Ando, B. Kannan, et al.
VLSI Technology 2014
Thin carbon films were deposited by ion beam sputtering at temperatures of 77-1073 K. Using Rutherford backscattering spectrometry and electron energy loss spectroscopy, the trends in film density and bonding were examined as a function of deposition conditions. It has been found that film density and sp3 bonding character unexpectedly increased with increased substrate thermal conductivity and decreasing substrate temperature, reaching values of 2.9 g/cc and 50%, respectively.
Takashi Ando, B. Kannan, et al.
VLSI Technology 2014
Jerome J. Cuomo, John Bruley, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Pouya Hashemi, Takashi Ando, et al.
VLSI Circuits 2015
Hiroaki Arimura, Stephen L. Brown, et al.
IEEE Electron Device Letters