Steven Steen, Sharee J. McNab, et al.
Microelectronic Engineering
Thin carbon films were deposited by ion beam sputtering at temperatures of 77-1073 K. Using Rutherford backscattering spectrometry and electron energy loss spectroscopy, the trends in film density and bonding were examined as a function of deposition conditions. It has been found that film density and sp3 bonding character unexpectedly increased with increased substrate thermal conductivity and decreasing substrate temperature, reaching values of 2.9 g/cc and 50%, respectively.