J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
We have investigated the carrier spin segregation process in a ZnSe/Zn0.96Fe0.04Se quantum-well structure by studying the energy and relative intensity of the ground-state exciton components as a function of applied magnetic field. The e1h1 heavy-hole exciton initially tends towards type-II behavior as the field is applied but the trend reverses itself at higher fields as the conduction-band splitting of the magnetic barriers becomes significant. The interplay between the electron-hole Coulomb attraction and the tunable type-II confining potentials is described in the context of a variational model. © 1995 The American Physical Society.
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
R.W. Gammon, E. Courtens, et al.
Physical Review B
K.N. Tu
Materials Science and Engineering: A
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992