A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
We have investigated the carrier spin segregation process in a ZnSe/Zn0.96Fe0.04Se quantum-well structure by studying the energy and relative intensity of the ground-state exciton components as a function of applied magnetic field. The e1h1 heavy-hole exciton initially tends towards type-II behavior as the field is applied but the trend reverses itself at higher fields as the conduction-band splitting of the magnetic barriers becomes significant. The interplay between the electron-hole Coulomb attraction and the tunable type-II confining potentials is described in the context of a variational model. © 1995 The American Physical Society.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
P.C. Pattnaik, D.M. Newns
Physical Review B
E. Burstein
Ferroelectrics