D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
Paper
Some electrical properties of the semiconductor βGa2O3
Abstract
The wide-band gap semiconductor βGa2O3 has an electron mobility of the order of 100 cm2/V-sec at room temperature. Single crystals grown under reducing conditions have about 2 × 1018 free carriers, apparently due to anion vacancies. © 1967.
Related
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
Xikun Hu, Wenlin Liu, et al.
IEEE J-STARS
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997