J.A. Van Vechten, J.M. Blum, et al.
IEEE T-ED
Paper
Some effects of Zn diffusion on Mn-doped GaAs
Abstract
Radiotracer techniques have been used to show that Zn diffusion into an originally uniformly Mn-doped GaAs wafer produces marked changes in the Mn concentration profile, resulting in a large minimum behind and a small minimum ahead of the Zn diffusion front. A model which assumes that Mn is an amphoteric impurity in GaAs is proposed to explain these changes. © 1966 The American Institute of Physics.
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