Recent developments in holographic scanning
L.D. Dickson, R.S. Fortenberry, et al.
Proceedings of SPIE 1989
Poly(tetrafluoroethylene), Teflon, is an excellent engineering material with a low dielectric constant, chemical inertness in hazardous environments, and thermal stability. However, it has many shortcomings such as poor adhesion to substrates, difficulty in micron-sized via hole fabrication, and almost zero solubility in common solvents. We found that Teflon self-developed very efficiently under pulsed electron beam (25 KV to 30 KV) exposure in soft vacuum. Teflon images were obtained by performing the electron exposure through a mask. Its etching rate is the highest among the polymer films studied including radiation-sensitive poly(2-butene sulfone). A possible mechanism for this high self-development rate is proposed. © 1989 SPIE.
L.D. Dickson, R.S. Fortenberry, et al.
Proceedings of SPIE 1989
J. Twieg, C. Grant Willson, et al.
Proceedings of SPIE 1989
Norman Bobroff, Petra Fadi, et al.
Proceedings of SPIE 1989
Chu R. Wie, K. Xie, et al.
Proceedings of SPIE 1989