Simulation study of reduced self-heating in novel thin-SOI vertical bipolar transistors

Simulations have been performed to study the self-heating in thin-SOI, vertical bipolar transistors for the first time. Two new device structures are proposed and the simulations show that they can improve the heat dissipation significantly. By adding a heat sink connecting the collector and the substrate and/or having a thin localized BOX underneath the SOI collector, self-heating can be reduced substantially without increasing device area or degrading device performance.