PaperTime dependence of the reflectivity of Si at 633 and 488 nm during pulsed laser annealingMarshall I. Nathan, R.T. Hodgson, et al.Applied Physics Letters
PaperElectroluminescence and photoluminescence of GaAs at 77°KMarshall I. Nathan, Gerald Burns, et al.Physical Review
PaperInvention of the injection laser at IBM: Personal recollectionsMarshall I. NathanSemiconductor Science and Technology
PaperGaAs lnjection laser with novel mode control and switching propertiesMarshall I. Nathan, J.C. Marinace, et al.Journal of Applied Physics
