J.D. Cressler, D.D. Tang, et al.
Workshop on Low Temperature Semiconductor Electronics 1989
A Schottky barrier is fabricated with a silicon-aluminum-silicon structure by the irradiation of either a pulsed or cw laser. The completed diodes have a large barrier height (1 eV) and good rectifying properties.
J.D. Cressler, D.D. Tang, et al.
Workshop on Low Temperature Semiconductor Electronics 1989
Q.Y. Ma, X. Wu, et al.
Physica C: Superconductivity and its applications
E.S. Yang, J.M. Brownlow
Journal of Applied Physics
Q.Y. Ma, T.J. Licata, et al.
Applied Physics Letters