E.S. Yang, C.M. Wu, et al.
Journal of Applied Physics
Paper
Schottky barrier formation by laser irradiation processing
Abstract
A Schottky barrier is fabricated with a silicon-aluminum-silicon structure by the irradiation of either a pulsed or cw laser. The completed diodes have a large barrier height (1 eV) and good rectifying properties.
Related
J.D. Cressler, D.D. Tang, et al.
Workshop on Low Temperature Semiconductor Electronics 1989
Q.Y. Ma, E.S. Yang, et al.
Journal of Electronic Materials
P.W. Li, H.K. Liou, et al.
Applied Physics Letters