Q.Y. Ma, E.S. Yang, et al.
Journal of Applied Physics
A Schottky barrier is fabricated with a silicon-aluminum-silicon structure by the irradiation of either a pulsed or cw laser. The completed diodes have a large barrier height (1 eV) and good rectifying properties.
Q.Y. Ma, E.S. Yang, et al.
Journal of Applied Physics
P.S. Ho, M. Liehr, et al.
Surface Science
R.A. McCorkle, H.J. Vollmer
Review of Scientific Instruments
Q.Y. Ma, T.J. Licata, et al.
Applied Physics Letters