Q.Y. Ma, X. Wu, et al.
Physica C: Superconductivity and its applications
Paper
Variation of the ideality factor in the curent-voltage characteristics of double-heterostructure diodes
Abstract
The low-current I-V characteristics of AlxGa1-xAs- GaAs DH laser diodes have been investigated. The variation of the ideality factor is explained by taking into account the interaction of the thermionic-field emission and interface charge. Both theoretical calculations and experimental data are presented here to show the validity of our model.
Related
P.W. Li, H.K. Liou, et al.
Applied Physics Letters
R.T. Lynch, L. Yang, et al.
Electronics Letters
Ulf Gennser, V.P. Kesan, et al.
Journal of Electronic Materials